Half-bridge Driver Ir2111.pdf 4y3v13
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Preliminary Data Sheet No. PD60028J
IR2111 HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation
• • • • • •
Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input
Product Summary VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
850 & 150 ns
Deadtime (typ.)
700 ns
Packages
Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shootthrough in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8 Lead PDIP 8 Lead SOIC
Typical Connection up to 600V VCC
VCC IN
IN COM LO
VB HO VS
TO LOAD
IR2111 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in figures 7 through 10.
Symbol
Definition
Min.
Max.
VB
High side floating supply voltage
-0.3
625
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
V CC + 0.3
VIN
Logic input voltage
-0.3
VCC + 0.3
dVs/dt PD RthJA
Allowable offset supply voltage transient (figure 2)
—
50
Package power dissipation @ TA ≤ +25°C
(8 Lead DIP)
—
1.0
(8 lead SOIC)
—
0.625
Thermal resistance, junction to ambient
(8 lead DIP)
—
125
(8 lead SOIC)
—
200
TJ
Junction temperature
—
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
Units
V
V/ns W °C/W
°C
Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
Definition
VB
High side floating supply absolute voltage
VS
High side floating supply offset voltage
Min.
Max.
VS + 10
VS + 20
Note 1
600
VHO
High side floating output voltage
VS
VB
VCC
Low side and logic fixed supply voltage
10
20
VLO
Low side output voltage
0
VCC
VIN
Logic input voltage
0
VCC
TA
Ambient temperature
-40
125
Note 1: Logic operational for V S of -5 to +600V. Logic state held for VS of -5V to -V BS.
2
Units
V
°C
IR2111
Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in figure 3.
Symbol ton toff
Definition
Min. Typ. Max. Units Test Conditions
Turn-on propagation delay
—
850
1,000
VS = 0V
Turn-off propagation delay
—
150
180
VS = 600V
Turn-on rise time
—
80
130
Turn-off fall time
—
40
65
DT
Deadtime, LS turn-off to HS turn-on & HS turn-off to LS turn-on
—
700
900
MT
Delay matching, HS & LS turn-on/off
—
30
—
tr tf
ns
Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The V IN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol VIH
Definition
Min. Typ. Max. Units Test Conditions
Logic “1” input voltage for HO & logic “0” for LO
6.4
—
—
VCC = 10V
9.5
—
—
VCC = 15V
12.6
—
—
—
—
3.8
—
—
6.0
VCC = 15V
—
—
8.3
VCC = 20V
—
—
100
VOL
High level output voltage, VBIAS - VO Low level output voltage, VO
—
—
100
ILK
Offset supply leakage current
—
—
50
VB = VS = 600V
IQBS
Quiescent VBS supply current Quiescent VCC supply current
—
50
100
VIN = 0V or VCC
—
70
180
IIN+
Logic “1” input bias current
—
20
40
VIN = VCC
IIN-
VIN = 0V
VIL
VOH
IQCC
Logic “0” input voltage for HO & logic “1” for LO
Logic “0” input bias current
—
—
1.0
VBSUV+
VBS supply undervoltage positive going threshold
7.3
8.4
9.5
VBSUV-
VBS supply undervoltage negative going threshold
7.0
8.1
9.2
VCCUV+
VCC supply undervoltage positive going threshold
7.6
8.6
9.6
VCCUV-
VCC supply undervoltage negative going threshold
7.2
8.2
9.2
IO+
Output high short circuit pulsed current
200
250
—
IO-
Output low short circuit pulsed current
420
500
—
VCC = 20V V
IO = 0A mV
µA
IO = 0A
VIN = 0V or VCC
V
VO = 0V, VIN = VCC mA
3
VCC = 10V
PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs
IR2111 Functional Block Diagram VB
HV LEVEL SHIFT
DEAD TIME
UV DETECT
R
PULSE FILTER
R
Q
PULSE GEN IN
HO
S VS
UV DETECT
V CC
LO DEAD TIME COM
Lead Definitions Symbol Description IN VB HO VS VCC LO COM
Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return
Lead Assignments
8 Lead DIP
8 Lead SOIC
IR2111
IR2111S Part Number 4
IR2111 IN
HO
LO
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
IN(LO) 50%
50%
IN(HO) ton
toff
tr 90%
LO HO Figure 3. Switching Time Test Circuit
50%
tf 90%
10%
10%
Figure 4. Switching Time Waveform Definition
IN (LO)
50%
50%
IN
50%
IN (HO)
LO
90%
HO
10%
10%
MT
MT
DT
LO
HO
90%
90%
LO
10% Figure 5. Deadtime Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
5
IR2111
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
6
IR2111 150
Jun ctio n T e m pe r atur e (°C )
Ju n ctio n T e m p e r atu r e (°C )
100
160
75
30V
50 25
1E+3
1E+4
1E+5
1E+6
100
30V
75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 7. IR2111 TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω
Figure 8. IR2111 TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω
15 0
32 0V 16 0V
150
30 V
125
12 5
Jun ctio n Te m p e r atur e (°C )
Ju n ctio n T e m p e r atu r e (°C )
160V
125
125
0 1E+2
320V
150
320
10 0 75 50 25 0 1E+2
1E+3
1E+4
1E+5
100 75 50 25 0 1E+2
1E+6
320V 160V 30V
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 9. IR2111 TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω
Figure 10. IR2111 TJ vs. Frequency (IRFPC50) Ω, VCC = 15V RGATE = 10Ω
7
IR2111 320V 150
320V 140V 150
160
100 75 30V
50 25 0 1E+2
30V
125 Ju nction Te m p e ratu re (°C )
Jun ctio n Te m p e r atur e (°C )
125
1E+3
1E+4
1E+5
100 75 50 25 0 1E+2
1E+6
1E+3
1E+4
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 11. IR2111S TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω
Figure 12. IR2111S TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω
320V 140V
320V 140V 30V 30V
150
150
125 Ju nction T e m p e r atur e (°C )
Ju nction T e m pe r atur e (°C )
1E+5
100 75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
125 100 75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 13. IR2111S TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω
Figure 14. IR2111S TJ vs. Frequency (IRFPC50) Ω, VCC = 15V RGATE = 10Ω
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR : Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99
8
IR2111 HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation
• • • • • •
Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Internally set deadtime High side output in phase with input
Product Summary VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
850 & 150 ns
Deadtime (typ.)
700 ns
Packages
Description The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shootthrough in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8 Lead PDIP 8 Lead SOIC
Typical Connection up to 600V VCC
VCC IN
IN COM LO
VB HO VS
TO LOAD
IR2111 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in figures 7 through 10.
Symbol
Definition
Min.
Max.
VB
High side floating supply voltage
-0.3
625
VS
High side floating supply offset voltage
VB - 25
VB + 0.3
VHO
High side floating output voltage
VS - 0.3
VB + 0.3
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage
-0.3
V CC + 0.3
VIN
Logic input voltage
-0.3
VCC + 0.3
dVs/dt PD RthJA
Allowable offset supply voltage transient (figure 2)
—
50
Package power dissipation @ TA ≤ +25°C
(8 Lead DIP)
—
1.0
(8 lead SOIC)
—
0.625
Thermal resistance, junction to ambient
(8 lead DIP)
—
125
(8 lead SOIC)
—
200
TJ
Junction temperature
—
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
Units
V
V/ns W °C/W
°C
Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
Definition
VB
High side floating supply absolute voltage
VS
High side floating supply offset voltage
Min.
Max.
VS + 10
VS + 20
Note 1
600
VHO
High side floating output voltage
VS
VB
VCC
Low side and logic fixed supply voltage
10
20
VLO
Low side output voltage
0
VCC
VIN
Logic input voltage
0
VCC
TA
Ambient temperature
-40
125
Note 1: Logic operational for V S of -5 to +600V. Logic state held for VS of -5V to -V BS.
2
Units
V
°C
IR2111
Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in figure 3.
Symbol ton toff
Definition
Min. Typ. Max. Units Test Conditions
Turn-on propagation delay
—
850
1,000
VS = 0V
Turn-off propagation delay
—
150
180
VS = 600V
Turn-on rise time
—
80
130
Turn-off fall time
—
40
65
DT
Deadtime, LS turn-off to HS turn-on & HS turn-off to LS turn-on
—
700
900
MT
Delay matching, HS & LS turn-on/off
—
30
—
tr tf
ns
Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The V IN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol VIH
Definition
Min. Typ. Max. Units Test Conditions
Logic “1” input voltage for HO & logic “0” for LO
6.4
—
—
VCC = 10V
9.5
—
—
VCC = 15V
12.6
—
—
—
—
3.8
—
—
6.0
VCC = 15V
—
—
8.3
VCC = 20V
—
—
100
VOL
High level output voltage, VBIAS - VO Low level output voltage, VO
—
—
100
ILK
Offset supply leakage current
—
—
50
VB = VS = 600V
IQBS
Quiescent VBS supply current Quiescent VCC supply current
—
50
100
VIN = 0V or VCC
—
70
180
IIN+
Logic “1” input bias current
—
20
40
VIN = VCC
IIN-
VIN = 0V
VIL
VOH
IQCC
Logic “0” input voltage for HO & logic “1” for LO
Logic “0” input bias current
—
—
1.0
VBSUV+
VBS supply undervoltage positive going threshold
7.3
8.4
9.5
VBSUV-
VBS supply undervoltage negative going threshold
7.0
8.1
9.2
VCCUV+
VCC supply undervoltage positive going threshold
7.6
8.6
9.6
VCCUV-
VCC supply undervoltage negative going threshold
7.2
8.2
9.2
IO+
Output high short circuit pulsed current
200
250
—
IO-
Output low short circuit pulsed current
420
500
—
VCC = 20V V
IO = 0A mV
µA
IO = 0A
VIN = 0V or VCC
V
VO = 0V, VIN = VCC mA
3
VCC = 10V
PW ≤ 10 µs VO = 15V, VIN = 0V PW ≤ 10 µs
IR2111 Functional Block Diagram VB
HV LEVEL SHIFT
DEAD TIME
UV DETECT
R
PULSE FILTER
R
Q
PULSE GEN IN
HO
S VS
UV DETECT
V CC
LO DEAD TIME COM
Lead Definitions Symbol Description IN VB HO VS VCC LO COM
Logic input for high side and low side gate driver outputs (HO & LO), in phase with HO High side floating supply High side gate drive output High side floating supply return Low side and logic fixed supply Low side gate drive output Low side return
Lead Assignments
8 Lead DIP
8 Lead SOIC
IR2111
IR2111S Part Number 4
IR2111 IN
HO
LO
Figure 1. Input/Output Timing Diagram
Figure 2. Floating Supply Voltage Transient Test Circuit
IN(LO) 50%
50%
IN(HO) ton
toff
tr 90%
LO HO Figure 3. Switching Time Test Circuit
50%
tf 90%
10%
10%
Figure 4. Switching Time Waveform Definition
IN (LO)
50%
50%
IN
50%
IN (HO)
LO
90%
HO
10%
10%
MT
MT
DT
LO
HO
90%
90%
LO
10% Figure 5. Deadtime Waveform Definitions
HO
Figure 6. Delay Matching Waveform Definitions
5
IR2111
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
6
IR2111 150
Jun ctio n T e m pe r atur e (°C )
Ju n ctio n T e m p e r atu r e (°C )
100
160
75
30V
50 25
1E+3
1E+4
1E+5
1E+6
100
30V
75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 7. IR2111 TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω
Figure 8. IR2111 TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω
15 0
32 0V 16 0V
150
30 V
125
12 5
Jun ctio n Te m p e r atur e (°C )
Ju n ctio n T e m p e r atu r e (°C )
160V
125
125
0 1E+2
320V
150
320
10 0 75 50 25 0 1E+2
1E+3
1E+4
1E+5
100 75 50 25 0 1E+2
1E+6
320V 160V 30V
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 9. IR2111 TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω
Figure 10. IR2111 TJ vs. Frequency (IRFPC50) Ω, VCC = 15V RGATE = 10Ω
7
IR2111 320V 150
320V 140V 150
160
100 75 30V
50 25 0 1E+2
30V
125 Ju nction Te m p e ratu re (°C )
Jun ctio n Te m p e r atur e (°C )
125
1E+3
1E+4
1E+5
100 75 50 25 0 1E+2
1E+6
1E+3
1E+4
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 11. IR2111S TJ vs. Frequency (IRFBC20) Ω, VCC = 15V RGATE = 33Ω
Figure 12. IR2111S TJ vs. Frequency (IRFBC30) Ω, VCC = 15V RGATE = 22Ω
320V 140V
320V 140V 30V 30V
150
150
125 Ju nction T e m p e r atur e (°C )
Ju nction T e m pe r atur e (°C )
1E+5
100 75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
125 100 75 50 25 0 1E+2
1E+3
1E+4
1E+5
1E+6
Frequency (Hz)
Frequency (Hz)
Figure 13. IR2111S TJ vs. Frequency (IRFBC40) Ω, VCC = 15V RGATE = 15Ω
Figure 14. IR2111S TJ vs. Frequency (IRFPC50) Ω, VCC = 15V RGATE = 10Ω
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR : Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/1/99
8
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