Tipl762 - Npn Silicon Power Transistors 1q3p5n
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TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
6 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed at 100°C
B
1
●
1000 Volt Blocking Capability
C
2
●
120 W at 25°C Case Temperature
E
3
SOT-93 PACKAGE (TOP VIEW)
Pin 2 is in electrical with the mounting base. MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage
SYMBOL TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A
V CBO VCES VCEO
VALUE 850 1000 850 1000 400 450
UNIT V V V
VEBO
10
IC
6
A
Peak collector current (see Note 1)
ICM
12
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
120
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Operating junction temperature range Storage temperature range NOTE
V
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
1
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus)
ICES
ICEO IEBO hFE
VCE(sat)
VBE(sat)
ft Cob
Collector-emitter sustaining voltage
TEST CONDITIONS IC =
100 mA
L = 25 mH
MIN
(see Note 2)
TIPL762
400
TIPL762A
450
TYP
MAX
V 50
VCE = 850 V
VBE = 0
TIPL762
Collector-emitter
VCE = 1000 V
VBE = 0
TIPL762A
cut-off current
VCE = 850 V
VBE = 0
TC = 100°C
TIPL762
200
VCE = 1000 V
VBE = 0
TC = 100°C
TIPL762A
200
Collector cut-off
VCE = 400 V
IB = 0
TIPL762
50
current
VCE = 450 V
IB = 0
TIPL762A
50
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off current Forward current transfer ratio
(see Notes 3 and 4)
IB =
0.4 A
IC =
2A
Collector-emitter
IB =
0.8 A
IC =
4A
saturation voltage
IB =
1.2 A
IC =
6A
IB =
1.2 A
IC =
6A
IB =
0.4 A
IC =
2A
Base-emitter
IB =
0.8 A
IC =
4A
saturation voltage
IB =
1.2 A
IC =
6A
IB =
1.2 A
IC =
6A
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
Current gain bandwidth product Output capacitance
50
1
IC = 0.5 A
UNIT
20
µA
µA mA
60 0.5
(see Notes 3 and 4)
1.0 2.5
TC = 100°C
V
5.0 1.1
(see Notes 3 and 4)
1.3 1.5
TC = 100°C
V
1.4
1 MHz
6
MHz
105
pF
NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing s, separate from the current carrying s.
thermal characteristics PARAMETER RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.25
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER
†
TEST CONDITIONS
†
MAX
UNIT
tsv
Voltage storage time
2.5
µs
trv
Voltage rise time
200
ns
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
IC = 6 A VBE(off) = -10 V
IB(on) = 1.2 A
IC = 6 A
IB(on) = 1.2 A
VBE(off) = -10 V
TC = 100°C
MIN
(see Figures 1 and 2)
(see Figures 1 and 2)
150
ns
50
ns
300
ns
3
µs
300
ns
150
ns
50
ns
500
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION 33 Ω
+5V
D45H11 BY205-400
33 Ω
BY205-400
RB
(on)
1 pF 180 µH V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222 BY205-400 Vclamp = 400 V
TUT
1 kΩ +5V
270 Ω
BY205-400
5X BY205-400
1 kΩ 2N2904
Adjust pw to obtain IC
D44H11
47 Ω For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V 100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv D - E = tfi E - F = tti
C
B - E = txo
V CE
B
90%
10%
Collector Voltage
D (90%)
E (10%) I
C(on)
Collector Current F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
3
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V
T762AE
100
TC = 125°C TC = 25°C TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
10
1·0 0·1
T762AH
5·0
IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 25°C
4·0
3·0
2·0
1·0
0 1·0
10
0
0·5
IC - Collector Current - A
1·0
2·5
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT
T762AI
5·0
IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 100°C
4·0
3·0
2·0
1·0
0
T762AJ
1·2 VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
2·0
IB - Base Current - A
Figure 3.
TC = 25°C
1·1
1·0
0·9
IC = IC = IC = IC =
0·8
6 4 2 1
A A A A
0·7 0
0·5
1·0
1·5
IB - Base Current - A
Figure 5.
2·0
2·5
0
0·2
0·4 0·6
0·8
1·0
1·2
1·4 1·6
1·8
2·0
IB - Base Current - A
Figure 6.
4
1·5
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE T762AF
ICES - Collector Cut-off Current - µA
10
1·0 TIPL762A VCE = 1000 V 0·1 TIPL762 VCE = 850 V 0·01
0·001 -80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 7.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
IC - Collector Current - A
100
SAP762AB
10
1·0
0.1
tp = 100 µs tp = 1 ms tp = 10 ms DC Operation
0·01 1·0
TIPL762 TIPL762A 10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
5
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
ZθJC / RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION T762AG
1·0 50% 20% 0·1
10% 5% 2%
0·01 1% t1
0%
0·001 10-5
duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 10-4
10-3
t2
( ) ZθJC RθJC
10-2
· R θJC(max) 10-1
t1 - Power Pulse Duration - s
Figure 9.
6
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
Mo Electronics Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Bourns: TIPL762A-S TIPL762-S
●
Rugged Triple-Diffused Planar Construction
●
6 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed at 100°C
B
1
●
1000 Volt Blocking Capability
C
2
●
120 W at 25°C Case Temperature
E
3
SOT-93 PACKAGE (TOP VIEW)
Pin 2 is in electrical with the mounting base. MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage
SYMBOL TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A
V CBO VCES VCEO
VALUE 850 1000 850 1000 400 450
UNIT V V V
VEBO
10
IC
6
A
Peak collector current (see Note 1)
ICM
12
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
120
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Operating junction temperature range Storage temperature range NOTE
V
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
1
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus)
ICES
ICEO IEBO hFE
VCE(sat)
VBE(sat)
ft Cob
Collector-emitter sustaining voltage
TEST CONDITIONS IC =
100 mA
L = 25 mH
MIN
(see Note 2)
TIPL762
400
TIPL762A
450
TYP
MAX
V 50
VCE = 850 V
VBE = 0
TIPL762
Collector-emitter
VCE = 1000 V
VBE = 0
TIPL762A
cut-off current
VCE = 850 V
VBE = 0
TC = 100°C
TIPL762
200
VCE = 1000 V
VBE = 0
TC = 100°C
TIPL762A
200
Collector cut-off
VCE = 400 V
IB = 0
TIPL762
50
current
VCE = 450 V
IB = 0
TIPL762A
50
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off current Forward current transfer ratio
(see Notes 3 and 4)
IB =
0.4 A
IC =
2A
Collector-emitter
IB =
0.8 A
IC =
4A
saturation voltage
IB =
1.2 A
IC =
6A
IB =
1.2 A
IC =
6A
IB =
0.4 A
IC =
2A
Base-emitter
IB =
0.8 A
IC =
4A
saturation voltage
IB =
1.2 A
IC =
6A
IB =
1.2 A
IC =
6A
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
Current gain bandwidth product Output capacitance
50
1
IC = 0.5 A
UNIT
20
µA
µA mA
60 0.5
(see Notes 3 and 4)
1.0 2.5
TC = 100°C
V
5.0 1.1
(see Notes 3 and 4)
1.3 1.5
TC = 100°C
V
1.4
1 MHz
6
MHz
105
pF
NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing s, separate from the current carrying s.
thermal characteristics PARAMETER RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1.25
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER
†
TEST CONDITIONS
†
MAX
UNIT
tsv
Voltage storage time
2.5
µs
trv
Voltage rise time
200
ns
tfi
Current fall time
tti
Current tail time
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
IC = 6 A VBE(off) = -10 V
IB(on) = 1.2 A
IC = 6 A
IB(on) = 1.2 A
VBE(off) = -10 V
TC = 100°C
MIN
(see Figures 1 and 2)
(see Figures 1 and 2)
150
ns
50
ns
300
ns
3
µs
300
ns
150
ns
50
ns
500
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION 33 Ω
+5V
D45H11 BY205-400
33 Ω
BY205-400
RB
(on)
1 pF 180 µH V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222 BY205-400 Vclamp = 400 V
TUT
1 kΩ +5V
270 Ω
BY205-400
5X BY205-400
1 kΩ 2N2904
Adjust pw to obtain IC
D44H11
47 Ω For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V 100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv D - E = tfi E - F = tti
C
B - E = txo
V CE
B
90%
10%
Collector Voltage
D (90%)
E (10%) I
C(on)
Collector Current F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
3
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V
T762AE
100
TC = 125°C TC = 25°C TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
10
1·0 0·1
T762AH
5·0
IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 25°C
4·0
3·0
2·0
1·0
0 1·0
10
0
0·5
IC - Collector Current - A
1·0
2·5
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT
T762AI
5·0
IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 100°C
4·0
3·0
2·0
1·0
0
T762AJ
1·2 VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
2·0
IB - Base Current - A
Figure 3.
TC = 25°C
1·1
1·0
0·9
IC = IC = IC = IC =
0·8
6 4 2 1
A A A A
0·7 0
0·5
1·0
1·5
IB - Base Current - A
Figure 5.
2·0
2·5
0
0·2
0·4 0·6
0·8
1·0
1·2
1·4 1·6
1·8
2·0
IB - Base Current - A
Figure 6.
4
1·5
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE T762AF
ICES - Collector Cut-off Current - µA
10
1·0 TIPL762A VCE = 1000 V 0·1 TIPL762 VCE = 850 V 0·01
0·001 -80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 7.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
IC - Collector Current - A
100
SAP762AB
10
1·0
0.1
tp = 100 µs tp = 1 ms tp = 10 ms DC Operation
0·01 1·0
TIPL762 TIPL762A 10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
5
TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
ZθJC / RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION T762AG
1·0 50% 20% 0·1
10% 5% 2%
0·01 1% t1
0%
0·001 10-5
duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = PD(peak) · 10-4
10-3
t2
( ) ZθJC RθJC
10-2
· R θJC(max) 10-1
t1 - Power Pulse Duration - s
Figure 9.
6
AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
Mo Electronics Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Bourns: TIPL762A-S TIPL762-S
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